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Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

机译：用STEM-EELS探测单层和双层六方氮化硼片中的缺陷和杂质诱导的电子结构变化

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Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 - August 2, 2012

机译：2012年7月29日至8月2日在美国亚利桑那州凤凰城举行的2012年显微技术和微分析技术上发表的论文的扩展摘要

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Ramasse, Q.; Alem, N.; Zettl, A.; Yazyev, O.; Pan, C.; Nair, R.; Jalil, R.; Zan, R.; Bangert, U.; Novoselov, K.S.; Seabourne, C.; Scott, A.J.;
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年度 2017
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机译：Ni（111）载体上金原子掺杂的六方氮化硼薄板的稳定性和电子性能：空位缺陷和载体对单原子催化的作用
2. Structures and electronic properties of vacancies at the interface of hybrid graphene/hexagonal boron nitride sheet [J] . Ding Ning, Lei Yanqiang, Chen Xiangfeng, Computational Materials Science . 2016,第Null期

机译：石墨烯/六方氮化硼杂化片界面的空位结构和电子性质
3. Theoretical Study of the Deposition of Pt Clusters on Defective Hexagonal Boron Nitride (h-BN) Sheets: Morphologies, Electronic Structures, and Interactions with O [J] . Duo Xu, Yue-jie Liu, Jing-xiang Zhao The journal of physical chemistry, C. Nanomaterials and interfaces . 2014,第17期

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4. Probing Defects and Impurity-induced Electronic Structure Changes in Single and Double-layer Hexagonal Boron Nitride Sheets with STEM-EELS [C] . Q.M. Ramasse, N. Alem, O.V. Yazyev, Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting;International Metallographic Society Annual meeting . 2012

机译：用STEM-EELS探测单层和双层六方氮化硼片材的缺陷和杂质诱导的电子结构变化
5. Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots [D] . Khanaki, Alireza. 2017

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6. Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy [O] . Do-Hyun Kim, Hag-Soo Kim, Min Woo Song, 2017

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7. Probing the Out-of-Plane Distortion of Single Point Defects in Atomically Thin Hexagonal Boron Nitride at the Picometer Scale [O] . Nasim Alem, Oleg V. Yazyev, Christian Kisielowski, 2011

机译：在微微尺尺度下探测原子薄六边形氮化物中的单点缺陷的外平面失真

Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

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